050-7156 rev a 1-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak apt30m61bll apt30m61sll 300v 54a 0.061 ? ? lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r mosfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 27a) zero gate voltage drain current (v ds = 300v, v gs = 0v) zero gate voltage drain current (v ds = 240v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 300 0.061 100500 100 35 apt30m61bll-sll 300 54 216 3040 403 3.23 -55 to 150 300 5430 1300 downloaded from: http:///
050-7156 rev a 1-2004 dynamic characteristics apt30m61bll - sll note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 0.89mh, r g = 25 , peak i l = 54a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - 54a di / dt 700a/s v r 300v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -54 a ) reverse recovery time (i s = -54 a , dl s /dt = 100a/s) reverse recovery charge (i s = -54 a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 54 216 1.3 440 5.8 5 symbol r jc r ja min typ max 0.31 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy min typ max 3720 920 4164 23 26 12 20 36 13 367319 451 348 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 150v i d = 54a @ 25c resistive switching v gs = 15v v dd = 150v i d = 54a @ 25c r g = 0.6 inductive switching @ 25c v dd = 200v, v gs = 15v i d = 54a, r g = 5 inductive switching @ 125c v dd = 200v, v gs = 15v i d = 54a, r g = 5 downloaded from: http:///
r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v 15v 6v 7v 8v 9v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature normalized to v gs = 10v @ 27a 0.1190.191 0.0135f0.319f power (watts) rc model junctiontemp. ( c) case temperature. ( c) 10v 0 5 10 15 20 25 30 0 2 4 6 8 10 0 20 40 60 80 100 120 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 27a v gs = 10v 160140 120 100 8060 40 20 0 6050 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 typical performance curves apt30m61bll - sll 050-7156 rev a 1-2004 180160 140 120 100 8060 40 20 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.20 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 300 0 10 20 30 40 50 0 10 20 30 40 50 60 70 80 90 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 216100 10 1 1614 12 10 86 4 2 0 10,000 5,0001,000 100 10 200100 5010 51 t j =+150c t j =+25c c oss c iss c rss t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 200v r g = 5 t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 35 40 45 50 v dd = 200v i d = 54a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 5040 30 20 10 0 900800 700 600 500 400 300 200 100 0 v dd = 200v r g = 5 t j = 125c l = 100h v dd = 200v r g = 5 t j = 125c l = 100h e on includes diode reverse recovery. 9080 70 60 50 40 30 20 10 0 12001000 800600 400 200 0 v ds = 150v v ds = 60v v ds = 240v i d = 54 apt30m61bll - sll typical performance curves 050-7156 rev a 1-2004 downloaded from: http:///
apt30m61bll - sll 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628) 16.05 (.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain) and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) drain (heat sink) 1.98 (.078) 2.08 (.082) gate drain source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51 (.532) revised 8/29/97 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) revised 4/18/95 d 3 pak package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions 050-7156 rev a 1-2004 t j = 125 c drain current drain voltage gate voltage 90% 90% t d(off) 0 10% switching energy t f switching energy gate voltage drain current drain voltage 5 % 90 % 10 % 5 % t r t d(on) 10 % t j = 125 c i c d.u.t. apt30ds30 v ce figure 20, inductive switching test circuit v dd g downloaded from: http:///
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